초크랄스키 단결정 장치내 실리콘 용융액 운동의 자기장효과
Magnetic field effects of silicon melt motion in czochralski crystal puller
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초록
요약초크랄스키 단결정장치내 실리콘 유동의 자기장효과에 대한 수치해석을 하였다. 8'' 단결정 성장과정에서 난류 모형을 사용하여 수송현상을 계산하였다. 도가니 회전수가 작으면 자연대류가 지배적이었다. 도가니 회전수가 증가할수록 강제대류가 증가되며 온도 분포는 더 넓어진다. cusp 자기장을 인가하면 도가니근처의 유동이 크게 감소하며 온도분포는 전도의 경우와 비슷해진다.
Abstract
A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystalpuller. The turbulent modeling was used to simulate the transport phenomena in 8" single crystal growing proces. Forsmall crucible angular velocity, the natural convection is dominant. As the crucible angular velocity increase, the forcedthe natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar to the caseof conduction.Key words Magnetic field effects, Czochralski crystal puller, Transport phenomena, Single crystal growing process,Natural convection, Forced convection, Temperature profiles, Silicon fluids, Conduction
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