Multi-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종접합구조의 성장
Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system
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초록
혼합소스 HVPE(hydride vapor phase epitaxy) 방법으로 InGaN/AlGaN의 이종접합구조(heterostructure)의 LED (light emitting diode)를 선택성장(SAG : selective area growth)하였다. InGaN/AlGaN 이종접합구조를 혼합소스 HVPE로 연속 성장하기 위하여 새로운 디자인의 multi-sliding boat를 도입하였다. SAG-InGaN/AlGaN LED의 상온 EL(electroluminescence) 특성은 주입전류가 20 mA일 때 중심파장은 425 nm였다. Multi-sliding boat를 이용한 혼합소스 HVPE 방법이 질화물 반도체 LED를 성장하는 유용한 방법이 될 수 있음을 확인하였다.1. 서 론
Abstract
The selective growth of InGaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.Key words HVPE, LED, SAG, EL, I-V, InGaN/AlGaN heterostructure, Multi-sliding boat systemMulti-sliding boat 방식을 이용한 혼합소스 HVPE에 의한 InGaN/AlGaN 이종접합구조의 성장장근숙, 김경화?, 황선령, 전헌수, 최원진, 양민, 안형수, 김석환*, 유재은**, 이수민**, M. Koike**한국해양대학교 반도체물리학과, 부산, 606-791*안동대학교 물리학과, 안동, 760-749
참고문헌 (15)
- S. Nakamura, "The blue laser diode" (1997)
- Y.J. Yu, "Optical investigation of InGaN", GaN quantum well structures with various barrier widths?, 2001, pp.28, ~
- H.M. Kim, "Cathodoluminescence characterization of GaN thick films grown by using the HVPE method?", 37 (2000)
- J.H. Chen, "Optical and structural properties of InGaN", GaN multiple quantum well structure grown by metalorganic chemical vapor deposition, 2005, pp.498, ~
- L. Hirsch, "Electrical characterization of InGaN", GaN light emitting diodes grown by molecular beam epitaxy?, 2003, pp.94, ~
- S. Sanorpim, "Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPE?", 237-239 (2002)
- S. Bohyama, "Freestanding GaN substrate by advanced facet-controlled epitaxial lateral overgrowth technique with masking side facets?", 44 (2005)
- D. Marx. Z. Kawazu, "Selective area growth of GaN", AlN heterostructures?, 1998, pp.189, 190[DOI]
- A. Usui, "Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy?", 36 (1997)
- H.S. Ahn, "Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy?", 243 (2005)
- S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes?", 281 (1998)
- Y. Narukawa, "Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm?", 70 (1997)
- Y. Li, "Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence?" (2006)
- K.P. O?Donnell, "The composition dependence of the InxGa1 - xN bandgap?", 269 (2004)
- "The EL spectra of SAG-LED for the different forward currents EL image of the SAG-LED"