화학적 기계적 연마 공정을 통한 bulk AlN 단결정의 표면 가공
Optimization of chemical mechanical polishing for bulk AlN single crystal surface
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초록
PVT법으로 성장된 AlN 단결정의 표면 평탄화 최적화 하기 위하여 기계적 연마 후 SiO2 slurry를 이용한 CMP 공정을 진행하였고 이에 따른 표면 형상, slurry 변화에 따른 가공 특성을 분석하였다. Slurry의 pH가 표면 연마 과정에 미치는 영향을 알아보기 위해 SiO2 slurry의 pH를 조절하였으며, 제타전위측정기를 통해 각각의 pH에 따른 zeta potential의영향과 MRR(material removal rate) 결과를 비교하였으며, 최종적으로 원자간력 현미경(atomic force microscope)을 이용한표면 거칠기 RMS(0.2 nm)를 얻을 수 있었다.
Abstract
To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and SiO2 slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of SiO2 slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).
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