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혼합소스 HVPE 방법에 의해 성장된 육각형 Si 결정

Hexagonal shape Si crystal grown by mixed-source HVPE method

박정현|김석환|이하영|김소윤|김경화|이재학|안형수|양민|전영태|이삼녕|이강석|전인준|조채용
한국결정성장학회 (The Korea Association Of Crystal Growth, Inc.)|2021.06|한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)|제31권 제3호|pp. 103-111|DOI 10.6111/JKCGCT.2021.31.3.103

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참고문헌

키워드

Hexagonal SiCubic SiMixed-source HVPESi allotropeDirect bandgap Si
주제분류재료공학

초록

고체 재료인 Si, Al 그리고 Ga을 혼합하는 혼합소스 수소화물기상 방법에 의해 육각형 Si 결정을 성장하였다. 새로 고안된 상압의 혼합소스 수소화물기상 방법에서는 1200°C의 고온에서 GaCln, AlCln 그리고 SiCln 가스 사이의 상호작용에 의해 핵이 형성된다. 또한 Si과 HCl 가스의 급격한 반응에 의해 높은 분압을 가진 전구 기체를 발생시키는 구조로 설계 되었다. 주사 전자 현미경(FE-SEM), 에너지 분산형 X-선 분광법(EDS), 고해상도 X-선 회절(HR-XRD) 그리고 라만 스펙트럼을 통하여 육각형 Si 결정의 특성을 확인하였으며, Si 산업 분야에서 새로운 소재로서 응용성이 기대된다.

Abstract

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method,nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200°C. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

참고문헌 (40)

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